Publication

System Health & Risk Management

International Journal


	Title	Test Scheme and Degradation Model of Accumulated Electrostatic Discharge (ESD) Damage for Insulated Gate Bipolar Transistor (IGBT) Prognostics
	Journal	IEEE Transactions on Device and Materials Reliability
	Authors	Junmin Lee, Hyunseok Oh^, Chan Hee Park, Byeng D. Youn^, and Bongtae Han
	Classification	Prognostics & Health Management
	Date	2019-03
	Citation Index	SCIE (IF: 2.0, Rank: 67.0%)
	Vol. / Page	Vol. 19, pp. 233-241
	File
	Link	doi.org/10.1109/TDMR.2019.2898920
	Visits	316

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